SKM 2021 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.6: Poster

Tuesday, September 28, 2021, 10:00–13:00, P

Surface Morphology of Self-Assembled InAs/GaAs Quantum Dots and Pattern Definition Layers grown by Molecular Beam Epitaxy — •Peter Zajac, Nikolai Bart, Andreas D. Wieck, and Arne Ludwig — Ruhr-Universität Bochum, Universitätsstraße 150, 44801 Bochum

The nucleation of self-assembled InAs/GaAs Quantum Dots (QDs), grown by molecular beam epitaxy, can be locally influenced by growing them on gradient pattern definition layers. Macro Photoluminescence Spectroscopy (PL) mapping reveals a modulation of QD density in a striped pattern along the gradient direction. Automated Atomic Force Microscopy (AFM) was employed to study the morphology of pattern definition layers over several millimeters, revealing a sinusoidal behavior of the monolayer step density. Local PL contrast is used to locate areas of highest QD density modulation. It is proposed that the periodic variation of roughness locally modifies the QD nucleation condition leading to the observed pattern [1].

[1] Bart et al., arXiv:2011.10632 (2020).