SKM 2021 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Nitride: Preparation, Charakterization and Devices

HL 9.3: Vortrag

Dienstag, 28. September 2021, 12:15–12:30, H4

Structural analysis of novel orientations of AlN grown on m-plane sapphire — •Jochen Bruckbauer¹, Gergely Ferenczi¹, Humberto Foronda², Sarina Graupeter², Ben Hourahine¹, Aimo Winkelmann^1,3, Zhi Li⁴, Ling Jiu⁴, Jie Bai⁴, Tao Wang⁴, Tim Wernicke², Michael Kneissl², and Carol Trager-Cowan¹ — ¹University of Strathclyde, UK — ²Technische Universität Berlin, Germany — ³AGH University of Science and Technology, Poland — ⁴University of Sheffield, UK

Heteroepitaxial III-nitrides can be grown with a wide range of orientations on a range of substrates. Determination of the epitaxial orientation relationship of the nitride film with its substrate is often necessary. Here, we report on the determination and observation of novel orientations in AlN grown on m- or (1100) plane sapphire using electron backscatter diffraction (EBSD). An electron backscatter diffraction pattern is recorded for each spatial point in an EBSD map from which crystal structure, orientation and misorientation can be determined with a spatial resolution of around 50 nm and a relative angular precision of around 0.1^∘. The AlN thin film exhibits twinned regions where the normal to a {1213} plane for each twin is within 9^∘ of the [1100] sapphire direction. The twins share a common {1100} plane. Furthermore for each twin, the normal to a {1122} AlN plane is within 3.5^∘ of the [1120] sapphire direction and a ⟨4312⟩ AlN direction is within 2^∘ of the [0001] sapphire direction. These orientations, together with the usually observed (1100) and (1122) cases, form a family of related growth directions for nitride thin films.