HL 9: Nitride: Preparation, Charakterization and Devices
Dienstag, 28. September 2021, 11:45–12:30, H4
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11:45 |
HL 9.1 |
AlPN on GaN: A new barrier material for HEMTs — •Markus Pristovsek and Yuto Ando
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12:00 |
HL 9.2 |
Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady state conditions — •Shawutijiang Sidikejiang, Philipp Henning, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Dirk Menzel, and Andreas Hangleiter
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12:15 |
HL 9.3 |
Structural analysis of novel orientations of AlN grown on m-plane sapphire — •Jochen Bruckbauer, Gergely Ferenczi, Humberto Foronda, Sarina Graupeter, Ben Hourahine, Aimo Winkelmann, Zhi Li, Ling Jiu, Jie Bai, Tao Wang, Tim Wernicke, Michael Kneissl, and Carol Trager-Cowan
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