SKM 2021 – wissenschaftliches Programm
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 1: Focus Session I: Ferroics - Domains and Domain Walls
KFM 1.3: Vortrag
Dienstag, 28. September 2021, 10:45–11:00, H2
Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide — •D. M. Evans1,2, T. S. Holstad2, A. B. Mosberg2, D. R. Småbråten2, P. E. Vullum3, A. L. Dadlani1, K. Shapovalov4, Z. Yan5,6, E. Bourret6, D. Gao2,7, J. Akola2,8, J. Torgersen2, A. T. J. van Helvoort2, S. M. Selbach2, and D. Meier2 — 1University of Augsburg, Germany — 2NTNU, Norway — 3SINTEF, Norway — 4ICMAB-CSIC, Spain — 5ETH Zurich, Switzerland — 6LBNL, USA — 7Nanolayers Research Computing LTD, London, — 8Tampere University, Finland
The control of conductivity is critical to any electronic device. In this context, oxide materials are particularly interesting as their conductivity can be continuously tuned via an electric field. In addition, they have a plethora of inherent functionalities arising from the electronic degrees of freedom, such as, superconductivity, magnetism, and ferroelectricity. However, utilizing both these changes in conductivity and electronic degrees of freedom simultaneously requires the ability to change one without affecting the other. Usually this is a problem, as the net redox reaction that gives the change in conductivity also affects the electronic degrees of freedom. In this talk, I demonstrate how stable, nanoscale, enhancement of conductivity can be achieved in ferroelectrics without net mass transfer, net change in stoichiometry, or the build-up of spurious electric and chemical gradients. This approach permits both the multiple orders of magnitude change in conductivity and the inherent functionality of oxides to be utilized independently and in parallel to each other.