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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 1: Focus Session I: Ferroics - Domains and Domain Walls

KFM 1.3: Vortrag

Dienstag, 28. September 2021, 10:45–11:00, H2

Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide — •D. M. Evans^1,2, T. S. Holstad², A. B. Mosberg², D. R. Småbråten², P. E. Vullum³, A. L. Dadlani¹, K. Shapovalov⁴, Z. Yan^5,6, E. Bourret⁶, D. Gao^2,7, J. Akola^2,8, J. Torgersen², A. T. J. van Helvoort², S. M. Selbach², and D. Meier² — ¹University of Augsburg, Germany — ²NTNU, Norway — ³SINTEF, Norway — ⁴ICMAB-CSIC, Spain — ⁵ETH Zurich, Switzerland — ⁶LBNL, USA — ⁷Nanolayers Research Computing LTD, London, — ⁸Tampere University, Finland

The control of conductivity is critical to any electronic device. In this context, oxide materials are particularly interesting as their conductivity can be continuously tuned via an electric field. In addition, they have a plethora of inherent functionalities arising from the electronic degrees of freedom, such as, superconductivity, magnetism, and ferroelectricity. However, utilizing both these changes in conductivity and electronic degrees of freedom simultaneously requires the ability to change one without affecting the other. Usually this is a problem, as the net redox reaction that gives the change in conductivity also affects the electronic degrees of freedom. In this talk, I demonstrate how stable, nanoscale, enhancement of conductivity can be achieved in ferroelectrics without net mass transfer, net change in stoichiometry, or the build-up of spurious electric and chemical gradients. This approach permits both the multiple orders of magnitude change in conductivity and the inherent functionality of oxides to be utilized independently and in parallel to each other.