SKM 2021 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 5: Poster Session KFM
KFM 5.20: Poster
Tuesday, September 28, 2021, 16:00–17:00, P
Colossal dielectric constant in h-ErMnO3 — •Lima Zhou1, Lukas Puntigam1, Markus Altthaler1, Dennis Meier2, István Kézsmárki1, Donald M. Evans1, and Stephan Krohns1 — 1University of Augsburg, 86159, Augsburg, Germany — 2NTNU Norwegian University of Science and Technology, 7034, Trondheim, Norway
Ferroelectric domain walls can be in some specific cases created, erased and rewritten making them interesting as functional nanoscale object in electronics. In the improper ferroelectric system h-ErMnO3 memristive switching and rectification of charged domain walls has been shown. Here, we explore if also the more insulating domain walls provide functionality in terms of an internal barrier layer capacitance leading to colossal dielectric constants. A recent work [1] already demonstrated via bulk dielectric spectroscopy that insulating domain walls are responsible for a dielectric relaxation-like feature. Our approach is to reveal the dielectric properties for a h-ErMnO3 single crystal before and after a distinct heat treatment leading to an increase in domain size by a factor of 10. Interestingly, the dielectric constant most likely ascribed to the internal barrier layers increases also by a factor of 10 according to the decrease of the volume fraction of the insulating domain walls (overall decrease in insulating barrier thickness giving rise to higher capacitance). With this work we provide a strategy of designing colossal dielectric constant based on internal insulating domain wall barriers. [1] Puntigam et al., Journal of Applied Physics 129, 074101 (Feb. 2021)