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MA: Fachverband Magnetismus

MA 6: Focus Session: Spin-Charge Interconversion (joint session MA/HL)

MA 6.4: Hauptvortrag

Dienstag, 28. September 2021, 15:15–15:45, H5

Ferroelectric switching of spin-to-charge conversion in GeTe — •Christian Rinaldi — Dipartimento di Fisica, Politecnico di Milano, 20133 Milano, Italy

Scalable and energy efficient magneto-electric spin-orbit (MESO) logic has been recently proposed by Intel as technologically suitable computing alternative to CMOS devices, towards attojoule electronics [1]. The MESO device comprises a magnetoelectric unit to drive a magnetic memory, while the read-out is perfomed exploiting spin-to-charge conversion in materials with large spin-orbit coupling.

Here we show that the ferroelectric Rashba semiconductor germanium telluride offers memory as well as spin-orbit read-out in a single material compatible with silicon, thus offering the opportunity for a great simplification of the MESO structure. Here we first demonstrate the robust control of ferroelectricity through gating. Then, by spin pumping measurements in Fe/GeTe, we reveal the ferroelectric control of its sizeable spin-to-charge conversion. These results pave the way to low power spin-orbit logic devices beyond-CMOS. [1] S. Manipatruni, Nature 565, 35 (2019); [2] S. Varotto et al., arXiv preprint, arXiv:2103.07646 (2021).