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SYWH: Symposium Physics of van der Waals 2D heterostructures

SYWH 1: Symposium: Physics of van der Waals 2D heterostructures

SYWH 1.4: Hauptvortrag

Donnerstag, 30. September 2021, 15:15–15:45, Audimax 2

Exciton manipulation and transport in 2D semiconductor heterostructures — •Andras Kis — École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

New opportunities are enabled by the band structure of transition metal dichalcogenides (TMDCs) in which we could harness the valley degree of freedom for valleytronics and next-generation photonics. Long-lived interlayer excitons in van der Waals heterostructures based on TMDCs have recently emerged as a promising platform for this, allowing control over exciton diffusion length, energy and polarization. I will show here how by using MoS2/WSe2 van der Waals heterostructures, we can realize excitonic transistors with switching action, confinement and control over diffusion length at room temperature in a reconfigurable potential landscape. On the other hand, the weak interlayer interaction and small lattice mismatch in MoSe2/WSe2 heterostructures results in brightening of forbidden optical transitions, allowing us to resolve two separate interlayer transitions with opposite helicities and meV-scale linewidths.Our more advanced excitonic devices now also offer the way to manipulate the motion of valley (spin) polarized excitons.