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TT: Fachverband Tiefe Temperaturen

TT 5: Poster Session: Superconductivity

TT 5.8: Poster

Montag, 27. September 2021, 13:30–16:00, P

Critical current suppression via electrostatic field effect in epitaxial grown nanodevice — •Sohaila Z Noby, Roman Hartmann, Elke Scheer, and Angelo Di Bernardo — Physics department, Universität Konstanz, Germany

Quantum devices based on superconducting materials provide various technological applications, such as e.g. current limiters, electronic filters, routers, digital receivers, and photon detectors. Superconductors demonstrate unconventional pronounced performance under their critical temperatures in industrial electronic circuits in a comparison with semiconductors. However, controlling the electrical conductivity in nanoscale semiconductor devices considers as one of the cornerstones of such technology. This is attributed to the week screening effect, which allows the penetration of the electric field into a lower charge density semiconductor material. Although that phenomenon was believed that can not be realized in superconductor materials due to their higher charge density, which eliminate the field effect on the surface. Recent studies show that the strong electrostatic field can manipulate superconductor characteristics, which their origin still controversial between scientists. This effect has been seen in suppression of the critical current via the application of higher electrostatic field in different material. One such example is niobium (Nb), a well-established suitable elemental superconductor in circuit operation due to its highest critical temperature (~9.2K). In our study the mechanism of field effect, which introduced as a gate voltage, is being studied in a four-terminal nanowire device based on epitaxial grown Nb material.