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TT: Fachverband Tiefe Temperaturen

TT 9: Poster Session: Correlated Electrons

TT 9.26: Poster

Tuesday, September 28, 2021, 13:30–16:00, P

Anisotropic Magnetoresistance in LAO/STO nanostructures — •Mithun S Prasad1 and Georg Schmidt1,21Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Von-Danckelmann-Platz 3, D-06120 Halle, Germany — 2Interdisziplinäres Zentrum für Meterialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, Heinrich-Damerow-Straße 4, D-06120 Halle, Germany

The high-mobility two-dimensional electron gas (2DEG) confined at the interface LaAlO3 (LAO) and SrTiO3 (STO) provides new opportunities to explore Nanoelectronic devices. In our group, we have developed an industry-compatible Nanopatterning technique [1] for the LAO/STO interface. Recent studies on this interface have revealed that at low temperature the current is confined to filaments which are linked to structural domain walls in the STO[2] with drastic consequences for example for the temperature dependence of local transport properties [3]. We have investigated magneto-transport in nanostructures having a different crystalline orientation with respect to the lattice. Our experiments show that not only the resistance but also the magnetoresistance varies with orientation. The magnetoresistance can even change sign strongly supporting the model of filamentary charge transport. The angle of orientation of the domain walls can lead to various localization effects on the application of magnetic fields which can explain the anisotropy found in our experiments.
[1] M. Z. Minhas et.al, AIP Advances 6, 035002 (2016)
[2] Kalisky et.al, Nat. Mat. 12, 1091-1095 (2013)
[3] M. Z. Minhas et.al, Sci. Rep. 7, 5215(2017)

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