SurfaceScience21 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 105: Poster Session VIII: Graphene and beyond II
O 105.2: Poster
Donnerstag, 4. März 2021, 13:30–15:30, P
LEEM/PEEM investigation of ambient oxidized g/ge(110) — •Ka Man Yu1,2, Chanan Euaruksakul3, Thipusa Wongpinij3, Robert M. Jacobberger4, Michael S. Arnold4, Max G. Lagally4, and Michael S. Altman1 — 1Hong Kong University of Science and Technology, Hong Kong SAR — 2University of Kaiserslautern, 67663 Kaiserslautern, Germany — 3Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand — 4University of Wisconsin-Madison, Wisconsin 53706, United States
Germanium (Ge) is an excellent candidate for MISFET devices due to its high intrinsic charge carrier mobility. However, in contrast to the native oxide on Si, the native oxide on Ge hinders practical applications. The recent finding that a graphene monolayer can diminish the oxidation rates of Ge under ambient conditions identifies a possible scheme for overcoming a key challenge to the development of Ge-based electronic devices. Further knowledge of how oxygen permeates graphene to react with Ge is crucial to achieving this goal. In this work, the oxidation of Ge(110) under a graphene monolayer that is caused by ambient exposure was investigated using LEEM and PEEM. Three oxide domains are identified: a mixed monolayer or dispersed submonolayer comprised of GeOx/GeO1+y, thin and thicker GeO1+y over a buried GeOx interfacial layer in contact with the Ge bulk. The permeability of graphene to oxygen is attributed to defects at boundaries between the prevalent R0 and R30 graphene grains, within grains and at wrinkles. A statistical treatment for isochromatic correction of energy-resolved PEEM images will also be presented.