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O: Fachverband Oberflächenphysik

O 105: Poster Session VIII: Graphene and beyond II

O 105.6: Poster

Thursday, March 4, 2021, 13:30–15:30, P

Control of interface alloying between silicene and a silver substrate — •Johannes Küchle1, Aleksandr Baklanov1, Felix Haag1, David Duncan2, Paul Ryan2,3, Ari Seitsonen4, Willi Auwärter1, and Francesco Allegretti11Physics Department E20, Technical University of Munich, 85748 Garching, Germany — 2Diamond Light Source, OX11 0DE Didcot, UK — 3Imperial College London, SW7 2AZ London, UK — 4Département de Chimie, École Normale Supérieure, 75005 Paris, France

Silicene, the silicon analogue of graphene, is a promising material with unique structural and electronic properties, which has been in the focus of intense research during the past decade. With the epitaxial fabrication via deposition of silicon on solid substrates being the best-established growth method, silicene is susceptible to strong interfacial interactions that may drastically alter its functional properties. However, these interactions are still largely unexplored. Here, we present our recent experiments with soft X-ray photoelectron spectroscopy (SXPS) at various Si coverages in combination with X-ray standing waves, indicating that during the growth of the most commonly studied (4 x 4) superstructure of silicene on Ag(111) Si-Ag surface alloying occurs. Accordingly, our scanning tunneling microscopy (STM) studies resolve a yet unreported phase, which we interpret as a Si-Ag alloy structure, extending underneath the silicene layer. Moreover, we show that growing silicene on a sacrificial Ag2Ge surface alloy strongly suppresses the Si-Ag alloy component in SXPS, resulting in new, distinct phases, as detected by low energy electron diffraction and STM.

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