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O: Fachverband Oberflächenphysik

O 108: Poster Session VIII: Poster to Mini-Symposium: Frontiers of electronic-structure theory V

O 108.3: Poster

Donnerstag, 4. März 2021, 13:30–15:30, P

Ultrafast dynamics of hot carriers in bulk semiconductors and in accumulation layer: energy relaxation and screening effects. — •Jelena Sjakste — LSI, CEA/DRF/IRAMIS, CNRS, Ecole polytechnique, Institut Polytechnique de Paris, 91120 Palaiseau, France

Electron-phonon coupling determines the charge transport properties in pure materials as well as the relaxation dynamics of photoexcited carriers. The rapid development of the computational methods based on density functional theory, on the one hand, and of the time- energy- and momentum- resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the role of the electron-phonon coupling [1,2].

In this work, we will present our recent results, both experimental and theoretical, on hot electron relaxation in silicon [3]. Moreover, we will present our recent results, both experimental and theoretical, on the hot electron relaxation in InSe. InSe is a quasi-2D material which was shown recently to have potential interest for optoelectronics. In this work, we will discuss our new results on the relaxation dynamics and screening of the electron-phonon interaction in doped InSe [4].

References:

[1] J. Sjakste et al, J. Phys: Cond. Mat. 30, 353001 (2018).

[2] Tanimura et al, Phys. Rev. B 93, 161203 (R) (2016).

[3] Tanimura, Kanasaki, Tanimura, Sjakste, Vast, Phys. Rev. B 100, 035201 (2019).

[4] Chen, Sjakste et al, PNAS 117, 21962-21967 (2020).