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O: Fachverband Oberflächenphysik

O 24: Poster Session II: Plasmonics and nanooptics II

O 24.6: Poster

Monday, March 1, 2021, 13:30–15:30, P

Plasmon-excited near-field luminescence of semiconductor quantum dots — •Vlastimil Křápek, Petr Dvořák, Lukáš Kejík, Michal Kvapil, Petr Liška, Jan Krpenský, and Tomáš Šikola — Brno University of Technology, Brno, Czech Republic

On-chip integration of light sources would benefit from near-field handling of the emission with a subwavelength spatial resolution. Here we present a fully near-field photoluminescence study of semiconductor quantum dots, with a surface plasmon interference device (SPID) used for the excitation and an aperture-type scanning near-field optical microscope (SNOM) combined with a spetrometer for the collection.

The SPID consists of an opaque metallic layer with thin subwavelength slits fabricated using focused-ion-beam milling. When illuminated from bottom, a near-field standing wave forms at the top interface [1,2,3] where it excites quantum dots deposited directly at the top interface.

We demonstrate the plasmon-excited near-field luminescence of CdSe/ZnS quantum dots with rather a weak effect of the excitation mechanism on the spectral profile of the emitted light. This makes the plasmon-excited luminescence a suitable tool for the on-chip integration of semiconductor light sources, as well as a characterization technique with the subwavelength spatial resolution.

[1] P. Dvořák et al., Nano Lett. 13, 2558 (2013).

[2] P. Dvořák et al., Opt. Express 25, 16560 (2017).

[3] P. Dvořák et al., Nanoscale 45, 21363 (2018).