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O: Fachverband Oberflächenphysik
O 33: Poster Session III: Semiconductor substrates I
O 33.1: Poster
Tuesday, March 2, 2021, 10:30–12:30, P
Molecular Beam Epitaxy of InAs(111)A — •Steffen Zelzer1,2, Rajib Batabyal1,2, Xiaojing Zhao1,2, Mohana Rajpalke2, and Peter Krogstrup1,2 — 1Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark — 2Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
The surface morphology in the µm and (sub) nm range of homoepitaxially molecular beam epitaxy (MBE) grown planar InAs(111)A buffer layer has been studied by scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We show how an optimized cool-down procedure can lead to atomically clean surfaces and present an approach to map the growth parameter space for the two relevant stages of nucleation (step flow and 2D nucleation) on this surface which determines the macroscopical surface morphology. Transition state kinetics are used in combination with critical growth conditions extracted from RHEED intensity measurements to explain the transition from step flow to 2D nucleation.