O 46: Poster Session IV: Semiconductor substrates II
Dienstag, 2. März 2021, 13:30–15:30, P
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13:30 |
O 46.1 |
Atomistic Modeling for the Vapor-Phase Growth of GaAs Nanowires: from DFT to Growth Kinetics — •In Won Yeu, Gyuseung Han, Cheol Seong Hwang, and Jung-Hae Choi
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13:30 |
O 46.2 |
3D Active Sites of Te in Hyperdoped Si by Hard X-ray Photoelectron Kikuchi-Diffraction — •Moritz Hoesch, Mao Wang, Shengqiang Zhou, Christoph Schlüter, Olena Fedchenko, Katerina Medjanik, Sergej Babenkov, Aimo Winkelmann, Hans-Joachim Elmers, and Gerd Schönhense
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13:30 |
O 46.3 |
GaInP(100) and InP(100) with different surface reconstructions for photoelectrochemical water splitting — •Olfa Dani, David Ostheimer, Mario Kurniawan, Agnieszka Paszuk, Andreas Bund, and Thomas Hannappel
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13:30 |
O 46.4 |
Caesium deposition on GaN to obtain a photocathode for particle accelerators — •Jana Schaber, Rong Xiang, Jochen Teichert, and André Arnold
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13:30 |
O 46.5 |
Au silicide nanowires on Si(110) — •Stephan Appelfeller
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