SurfaceScience21 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 61: Poster Session V: Oxide and insulator surfaces: Structure, epitaxy and growth I
O 61.1: Poster
Mittwoch, 3. März 2021, 10:30–12:30, P
High Pressure Oxidation of Copper on Au(111) - A Route towards Bulk-like Cuprous Oxide Films — •Alexander Gloystein1, Claudine Noguera2, Jacek Goniakowski2, and Niklas Nilius1 — 1Carl von Ossietzky University, Institute of Physics, D-26111 Oldenburg, Germany — 2CNRS-Sorbonne University, UMR 7588, INSP, F-75005 Paris, France
As low-pressure oxidation is inefficient to grow Cu2O films of more than monolayer thickness, Cu slabs were oxidized on Au(111) at 50 mbar of oxygen. The procedure results in bulk-like Cu2O films with (111) termination, as concluded from XPS, LEED and STM. Their surface shows a (sqrt3 x sqrt3)R30° reconstruction, also known from bulk crystals. Using DFT, it is assigned to an array of Cu4O nano-pyramids that occupy every third Cu-O six ring of the bulk-cut (111) surface and remove the majority of its dangling bonds. Electronically, the films exhibit a p-type conductance behavior with the valence-band maximum located directly at EF. At high temperature, the films decay into Cu2O(111) crystallites and a Cu3O2 surface oxide, the latter resembling the Cu-O monolayer formed upon low-pressure Cu oxidation.