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O: Fachverband Oberflächenphysik

O 74: Poster Session VI: Oxide and insulator surfaces: Structure, epitaxy and growth II

O 74.3: Poster

Mittwoch, 3. März 2021, 13:30–15:30, P

Strongly Strained VO2 Thin Film Growth — •Simon Fischer¹, Jan Ingo Flege², Michael Foerster³, Lucia Aballe³, Jens Falta¹, and Jon-Olaf Krisponeit¹ — ¹Institute of Solid State Physics, University of Bremen, Germany — ²Applied Physics and Semiconductor Spectroscopy, BTU Cottbus, Germany — ³ALBA Synchrotron Light Facility, Barcelona, Spain

The semiconductor-metal transition temperature of VO2 strongly shifts as a result of strain applied along the rutile c axis, making it interesting for various switching applications, as smart coatings and as sensors. In the past, this has been demonstrated, for instance, through the application of epitaxial strain on TiO2 substrates.

We extend this tailoring approach by utilizing the much larger lattice mismatch of 8.78 % occurring in the VO2/RuO2 system for orientations where the c axis lies in-plane. Depositing vanadium oxide by atomic oxygen-supported reactive MBE on an oxidized Ru(0001) template, we have grown VO₂ thin films on single domain RuO2 islands with distinct orientations. Locally resolved electron spectroscopy was used to ascertain the correct stoichiometry of the grown VO2 films on all template island types. Low energy electron diffraction reveals the VO₂ films to grow indeed fully strained on RuO2(110) but fully relaxed on RuO2(100).

Hence, the presented template allows for simultaneous access to a remarkable strain window ranging from bulk-like structures to regions of massive tensile strain.