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O: Fachverband Oberflächenphysik

O 77: Poster Session VI: Scanning probe techniques: Method development I

O 77.6: Poster

Mittwoch, 3. März 2021, 13:30–15:30, P

Ultra-Shallow Dopant Profiles in H:Si(001) as In-Situ Electrodes in Scanning Probe Microscopy — •Alexander Kölker, Takashi Kumagai, Martin Wolf, and Matthias Koch — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany

To fully enable the potential of nano-devices a detailed understanding of the underlying physics is of importance linking the atomic structure to the electronic properties of the device. Although scanning probe microscopy (SPM), with its outstanding spatial resolution, is sensitive to both, the experimental capabilities are limited by the vertical arrangement of the tip-sample junction. Therefore it is often impossible to characterize an electrical nano-circuit in-operation with a conventional SPM. These restrictions can be addressed using multi-tip scanning tunneling microscopy (STM) [1]. However, upgrading an existing STM with additional electrodes requires severe and cost-intensive modifications of the experimental setup. Here, we demonstrate the applicability of ion-implanted electrodes as a feasible way to enhance a commercial Createc GmbH low-temperature SPM with additional electrodes. These electrodes are in close proximity to the surface and act as drain or gate and show ohmic behaviour [2], even after high temperature surface preparation needed to achieve an atomically flat surface. We used STM spectroscopy to probe the transition from metallic to insulating at the electrode interface. First gating experiments of dangling bonds on the H:Si(001) surface are presented. [1] B. Voigtländer et. Al, Rev. Sci. Instrum. 89, 101101 (2018) [2] A.N. Ramanayaka et. al Scientific Reports 8, 1 (2018)