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O: Fachverband Oberflächenphysik
O 93: Poster Session VII: Graphene and beyond I
O 93.13: Poster
Thursday, March 4, 2021, 10:30–12:30, P
In-plane heterostructures of transition metal dichalcogenide monolayers — •Kai Mehlich1,2, Daniela Dombrowski1,2, Thais Chagas1, Daniel Kurz1, Thomas Michely3, and Carsten Busse1 — 1Department Physik, Universität Siegen, Walter-Flex-Str. 3, 57068 Siegen — 2Institut für Materialphysik, WWU Münster, Wilhelm-Klemm-Str. 10, 48149 Münster — 3II. Physikalisches Institut , Universität zu Köln, Zülpicher Str. 77, 50937 Köln
Modern electronics and optoelectronics utilise complex materials to maximize efficiency and reduce size, while requiring specific electronic properties. 2D-materials can fulfill these desires excellently. With epitaxial growth of monolayer transition metal dichalcogenides like TaS2, WS2 and MoS2 already an established line of research, we increased the range of possibilities by successfully growing in-plane heterostructures of these materials. The heterostructures are realised by sequential epitaxial growth of monolayers on Au(111), thereby forming the thinnest possible heterostructures. The material combination was chosen because of the difference in lattice parameters and electronic structure (as monolayer MoS2 and WS2 are semiconductors and monolayer TaS2 is metallic). The difference in lattice parameters induces stress, which has to be compensated. We categorised the relieve mechanisms into three groups, being: Defects, compression or stretching of the materials, and deformation in the z-plane. The mechanisms are observed by STM-imaging and analysed quantitatively on their appearance depending on the hetero-boundary, mostly showing an uninterrupted boundary.