SurfaceScience21 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 93: Poster Session VII: Graphene and beyond I

O 93.5: Poster

Donnerstag, 4. März 2021, 10:30–12:30, P

Reduced step bunching during growth of epitaxial graphene on silicon carbide (0001) — •Robert Appel, Philipp Weinert, and Carsten Westphal — Experimentelle Physik I, TU Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany

Epitaxial graphene (EG) has attracted significant interest in the recent years due to the simple preparation method by heating silicon carbide (0001). The major drawback of this approach is step bunching (SB) that leads to large terraces and tall step heights. These disconnect the EG layers from step to step resulting in anisotropic electronic and magnetic properties. To prevent this, samples with shallow steps are desired. The (6√3 × 6√3)R30^∘-reconstruction (so-called buffer layer (BL)) of the SiC(0001) constrains the SB and forms while heating. Therefore, a fast formation of the BL while heating without mono layer or bilayer patches is of utmost importance.

We use the confinement controlled sublimation (CCS) method in argon atmosphere because it is known for reproducibility and tunability. Thus, it is a promising method to find the ideal parameters for fast BL formation. Kruskopf et al. demonstrated the preparation of EG with shallow steps and less SB by using a high heating rate, a short heating time and a high preparation temperature.

In this study, we explore the applicability of the CCS method in order to obtain similar results with shallow steps and less SB. For this purpose, we systematically modify the preparation parameters and characterize the obtained samples with atomic force microscopy.