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K: Fachverband Kurzzeit- und angewandte Laserphysik
K 1: Laser Systems
K 1.4: Vortrag
Dienstag, 15. März 2022, 11:15–11:30, K-H4
InP-based Semiconductor Saturable Absorber Mirror (SESAM) for ultrashort laser pulse generation at 1560 nm — •Alexander Dohms1, Steffen Breuer1, Christoph Skrobol2, Robert B. Kohlhaas1, Lars Liebermeister1, Martin Schell1,3, and Björn Globisch1,3 — 1Fraunhofer HHI, Einsteinufer 37, 10587 Berlin, Germany — 2TOPTICA Photonics AG, Lochhamer Schlag 19, 82166 Gräfelfing, Germany — 3TU Berlin, Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany
Semiconductor Saturable Absorber Mirrors (SESAMs) are key to ultrafast lasers, as they allow for simple and self-starting passive modelocking and pulse stabilization. However, SESAMs based on the standard AlAs/GaAs material system require highly strained InGaAs absorber layers, which may reduce the device efficiency and operational lifetime. Here, we report on an entirely strain-free SESAM based on InP/InGaAlAs, designed for 1560 nm operation with an Erbium-doped fiber laser. The SESAM is composed of a highly reflective InGaAlAs/InAlAs Bragg mirror and an InGaAs absorber, which provides ultrafast SESAM response (τ < 1 ps), low non-saturable losses and high modulation depth (ΔR = 8 %) at the same time. The near anti-resonant SESAM design results in very high saturation fluence (25 μJ/cm2) and roll-over fluence (33 mJ/cm2), and is demonstrated to enable successful laser self-start and stable modelocking of 330 fs pulses at 80 MHz repetition rate and 17.5 mW average power. This illustrates the excellent optical performance of InP-based SESAMs, which will enable more reliable and efficient ultrafast laser systems.