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K: Fachverband Kurzzeit- und angewandte Laserphysik

K 3: Pulsed Power - XUV and EUV Sources and their Applications

K 3.3: Vortrag

Mittwoch, 16. März 2022, 15:00–15:15, K-H4

Fast up-scalable SiC-MOSFET HV switching modules — •Rainer Bischoff, Ralf Himmelsbach, and Meik Stoll — French-German Research Institute of Saint-Louis (ISL), 5 rue du General Cassagnou, 68301 Saint-Louis, France

We report on the development of fast high voltage (HV) switching modules, which can be scaled-up because of the principle of a series arrangement of commercial-off-the-shelf (COTS) SiC-MOSFETs. In detail, the switching modules consist of two circuit boards. Each one features five SiC-MOSFETs commercialized by Wolfspeed/CREE that are getting stacked in order to minimize the area of the current loop between high voltage and ground connector, and, as a result, minimizing the inductance of the structure. An alternative solution for the power supply of the gate control circuit and the generation of the gate-source voltage was implemented. The SiC-MOSFET switching modules generate directly all necessary voltages out of the applied HV charging voltage obtained using voltage divider circuits consisting of resistors and Zener diodes. The realized switching modules reached a current turn-on time of 12 ns with 3M0075120 SiC-MOSFETs at a switching voltage of 10 kV and a drain current of 39 A. Three of these 10-kV modules equipped with C2M0080120D SiC-MOSFETS were successfully connected to an up-scaled 30-kV switching module. Its current turn-on time was experimentally determined to 12 ns at a drain current of 30 A.