Erlangen 2022 – scientific programme

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Q: Fachverband Quantenoptik und Photonik

Q 11: Quantum Technologies II

Q 11.4: Talk

Monday, March 14, 2022, 17:30–17:45, Q-H13

Epitaxial growth of InP-based 1.3 micrometer quantum dots — •Vinayakrishna Joshi, Sven Bauer, Vitalii Sichkovskyi, Kerstin Fuchs, and Johann Reithmaier — Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), CINSaT, Uni-versity of Kassel Kassel, Germany

The transmission bands for medium to long range data communication are centered at 1.3 and 1.55 micrometer. The InAs/GaAs material system is widely researched at 1.3 micrometer[1], but 1.55 micrometer is hard to accomplish. Contrary, InP and InAs have a smaller lattice mismatch, which enables emission at 1.55 microns and already has been playing a dominant role. Compared to GaAs, InP devices allows higher frequency response and also has a higher modal gain. Therefore, to cover also the 1.3 micrometer regime, a strongly modified growth process is needed.

The structures were grown on S-doped InP (100) substrates, starting with a thick InP buffer layer, followed by InAlGaAs barrier layer. The active layer of 3 ML thick InAs QDs was grown. This was capped by another InAlGaAs layer. To achieve lasing at 1.3 microns, the QDs were grown on a nucleation layer which enables in creating more nucleation points for the QDs. This new type of QD gain material processed into broad area and ridge waveguide lasers. Static characterization data showed a high modal gain of about 15 cm-1 per quantum dot layer similar to 1.55 micrometer high-performance QD lasers [2]. [1]*M. Suguwara, et al., Journal of Applied Physics 97 (2005) [2]*S. Bauer et al., IEEE Nanotechnology Magazine 23 (2021)