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Q: Fachverband Quantenoptik und Photonik

Q 31: Photonics I

Q 31.6: Vortrag

Mittwoch, 16. März 2022, 11:45–12:00, Q-H15

Aluminum nitride integration on silicon nitride photonic circuits: a new hybrid approach towards on-chip nonlinear optics — Giulio Terrasanta^1,2, •Timo Sommer^1,4, Manuel Müller^3,1, Matthias Althammer^3,1, Rudolf Gross^3,1,4, and Menno Poot^1,4,5 — ¹Department of Physics, Technical University Munich, Garching, Germany — ²Physics Section, Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland — ³Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — ⁴Munich Center for Quantum Science and Technology (MCQST), Munich, Germany — ⁵Institute for Advanced Study, Technical University Munich, Garching, Germany

Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with excellent linear and nonlinear optical properties, in particular its χ⁽²⁾ that allows single-photon generation. In this talk, we demonstrate the integration of AlN on silicon nitride (SiN) photonic chips. We sputtered c-axis oriented AlN on top of pre-patterned SiN microrings. We varied AlN thickness, ring radius, and waveguide width n different chips to meet the phase-matching condition for second harmonic generation or spontaneous parametric down-conversion. With XRD, optical reflectometry, SEM, and AFM, we investigated the deposited AlN films and proofed their good optical quality. This hybrid approach adds χ⁽²⁾ nonlinearity to the SiN platform without the challenging process of AlN etching. Therefore, the integration of single photon-pair generation depends only on reliable SiN nanofabrication.