Erlangen 2022 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
Q: Fachverband Quantenoptik und Photonik
Q 41: Nano-Optics
Q 41.7: Poster
Wednesday, March 16, 2022, 16:30–18:30, P
Laser Annealing of Quantum Emitters in Hexagonal Boron Nitride — •Tjorben Matthes1, Antonia Klein2, Uwe Zeitner1, 2, Falk Eilenberger1, 2, and Tobias Vogl1 — 1Institute of Applied Physics, Friedrich-Schiller-University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany — 2Fraunhofer-Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena, Germany
Quantum emitters based on fluorescent defects in wide-bandgap materials such as the 2D material hexagonal boron nitride (hBN) are promising candidates for usage in quantum information applications. There are several fabrication mechanisms of these emitters, however, in most of these methods the emitter formation is probabilistic at random locations. The crystals are typically irradiated extensively with defects forming over the entire area and subsequently annealed as a whole. The position and number of the thereby created emitters are not reliably controllable.
In this presentation we localize the emitter formation using a high power laser. With an ultrashort pulse it is possible to induce damage to the crystal lattice. Using slightly less intense recurring pulses we subsequently anneal the sample in a small area within the laser spot size. Simulations have shown that the typical annealing temperatures of 850∘C are reached within 0.5 ms for our laser configuration. With confocal excitation through a second laser, we can monitor the fluorescence count-rate and get a feedback when an emitter has been formed and activated, thereby making this fabrication method deterministic.