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Q: Fachverband Quantenoptik und Photonik

Q 46: Nano-Optics I

Q 46.4: Vortrag

Donnerstag, 17. März 2022, 11:30–11:45, Q-H11

Manipulating ground-state properties of hBN quantum emitters — •Chanaprom Cholsuk¹, Sujin Suwanna², Falk Eilenberger¹, and Tobias Vogl¹ — ¹Institute of Applied Physics, Friedrich-Schiller-University, Albert-Einstein-Straße 15, 07745 Jena — ²Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok, 10400, Thailand

Quantum key distribution exploits quantum properties such as unclonable single photon states for unconditionally secure communication. As a result, nanoscale single photon emitters (SPEs) have become highly sought-after. The color-centers or fluorescent defects in hexagonal boron nitride (hBN) emit single photons at room temperature with high brightness and short excited state lifetime. The specific types of defects, however, remain unclear and require some manipulation to enhance the quantum efficiency while preserving photon purity.

In this presentation, we provide a rigorous density functional theory (DFT) calculation-based overview of the formation mechanism of SPEs in hBN. A large class of defects has been investigated and identified in the electronic structure. Consequently, we can now classify the emission wavelengths of such defects and attribute defect types to specific sources. Moreover, the DFT calculations allow us to explore tuning mechanisms as well as to tailor the photophysical properties of the emitters. We can therefore develop feasible approaches to enhance the quantum efficiency and use external strain to both manipulate the defect states as well as to reduce the defect formation energy to enhance the probability for a defect to form.