Erlangen 2022 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 53: Nano-Optics II
Q 53.6: Talk
Thursday, March 17, 2022, 15:15–15:30, Q-H11
Electrical excitation of color centers in phosphorus-doped diamond Schottky diodes — •Florian Sledz1, Igor A. Khramtsov2, Assegid M. Flatae1, Stefano Lagomarsino1, Navid Soltani1, Shannon S. Nicley3, Ken Haenen3, Jin Qun4, Xin Jiang4, Paul Kienitz5, Peter Haring Bolivar5, Dmitry Yu. Fedyanin2, and Mario Agio1 — 1Laboratory of Nano-Optics, University of Siegen, Siegen Germany — 2Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Dolgoprudny Russian Federation — 3Institute for Materials Research (IMO) & IMOMEC, Hasselt University & IMEC vzw, Diepenbeek, Belgium — 4Institute of Materials Engineering, University of Siegen, Siegen Germany — 5Institute of Graphene-based Nanotechnology, University of Siegen, Siegen Germany
A robust single-photon source operating upon electrical injection at ambient condition is desirable for quantum technologies. Silicon-vacancy color centers in diamond are promising candidates as their emission is concentrated in a narrow zero-phonon line with a short excited-state lifetime of ≈ 1 ns. Under optical excitation we observed single silicon-vacancy color centers in n-type diamond [1]. In contrast to common approaches based on p-n or p-i-n structures, we developed an approach for the electrical excitation based on color centers in a Schottky barrier diode. This paves the way for the predicted bright luminescence of electrically driven color centers in diamond [2]. Ref.: [1]. Flatae et al Diam. Relat. Mater. 105, 107797 (2020). [2]. Fedyanin and Agio, New J. Phys. 18, 073012 (2016).