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Q: Fachverband Quantenoptik und Photonik
Q 53: Nano-Optics II
Q 53.9: Vortrag
Donnerstag, 17. März 2022, 16:00–16:15, Q-H11
Photoelectrical imaging of the dark state of SiV in diamond — •Ilia Chuprina1, Milos Nesladek2, Adam Gali3, Petr Siyushev1, and Fedor Jelezko1 — 1Institute for Quantum Optics, Ulm University, D-89081 Germany — 2Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, 3590 Diepenbeek, Belgium — 3Wigner Research Centre for Physics, P.O. Box 49, H-1525, Budapest, Hungary
Group-IV defects in diamond are promising candidates for quantum information processing. Among them, silicon-vacancy (SiV) is the most studied one, and yet, many questions remain, particularly about optimization of the creation yield, stabilization in different charge states, etc. Recently, a developed photoelectrical imaging technique might be a powerful tool to unravel some of that questions. In this work, we present our recent results on the charge dynamics of SiV centers in diamond using optical and photoelectrical detection technics. Exploiting photoelectrical measurements, we visualize optically inactive defects, which can be turned on and off upon applying a different bias voltage to the electrodes. Using a combination of photoluminescence spectroscopy and photoelectrical imaging, we attribute these dark defects to another SiV charge state and discuss possible models of charge state dynamics. This behavior can be fairly extended to the whole family of the group-IV defects in diamond. Our findings might be useful for the development of the active charge state control of the group-IV defects.