Heidelberg 2022 – scientific programme
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T: Fachverband Teilchenphysik
T 66: Semiconductor Detectors: Radiation Hardness, new Materials and Concepts 2
T 66.1: Talk
Wednesday, March 23, 2022, 16:15–16:30, T-H25
Study of the self-heating in SiPMs — •Carmen Victoria Villalba Petro, Erika Garutti, Robert Klanner, Stephan Martens, and Jörn Schwandt — Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Deutschland.
A dramatic increase of the dark current is the main effect of radiation damage in SiPMs. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Therefore, the knowledge of the SiPM temperature is necessary to understand the changes of its parameters with irradiation.
The self-heating studies were performed with a KETEK SiPM, 15x15 mm2 pixel size, mounted on an Al2O3 substrate 0.6 mm thick, which was either directly connected to the temperature controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM was illuminated by a LED operated in DC-mode. SiPM current was measured at different voltages, LED currents, chuck temperatures, and thermal resistivities for a number of measurement cycles. The data are used to determine the steady-state temperature as a function of dissipated power and thermal resistance, as well as the time dependencies for heating and cooling. This information could be used to correct the parameters determined for radiation-damaged SiPM for the effects of self-heating.
The presentation describes the experimental layout, the data taking, the analysis methods, the results obtained and a comparison to thermal simulations. The application of the method for the study of radiation damaged SiPMs and its use in actual experiments is discussed.