Heidelberg 2022 – scientific programme
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T: Fachverband Teilchenphysik
T 66: Semiconductor Detectors: Radiation Hardness, new Materials and Concepts 2
T 66.5: Talk
Wednesday, March 23, 2022, 17:15–17:30, T-H25
Characterisation and Radiation Hardness of Tip-Avalanche PhotoDiodes — •Julius Römer1, Erika Garutti1, Wolfgang Schmailzl2,3, Jörn Schwandt1, and Stephan Martens1 — 1Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Deutschland — 2Bundeswehr Universität München, Neubiberg, Deutschland — 3Broadcom Inc., Regensburg, Deutschland
Silicon Photomultipliers (SiPM) are the photon detectors of choice for many applications. Development of SiPMs with conventional single photon avalanche diode (SPAD) built around a planar pn-junction reaches a trade-off between photon detection efficiency (PDE) and dynamic range. A challenge in designing efficient red-sensitive SiPMs lies in the requirement for large depletion depths.
A novel design design featuring a quasi-spherical pn-junction called Tip Avalanche Photodiode (TAPD) tackles both problems. For a pixel pitch of 15 µm, the SiPM prototype reaches a PDE of 73 % at 600 nm and 22 % at 900 nm, a high dynamic range, as well as a recovery time below 4 ns. The aim of this study is to characterize this novel type of SiPM. In particular the question of radiation hardness of TAPD is addressed.
After irradiation with reactor neutrons with fluences up to 1· 1012 cm−2 1 MeV neutron equivalent, characterisation with I−V and C−V−f measurements show that despite the increased bulk volume, TAPD-SiPMs show similar loss of response and increase in dark count rate (DCR) with irradiation compared to planar SiPM devices, enhancing the usability in high energy particle experiments.