Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 11: Focus Session: Quantum Properties at Functional Oxide Interfaces 1 (joint session HL/DS)
Dienstag, 6. September 2022, 10:00–13:00, H34
Modern oxide materials exhibit a rich variety of physical properties that lead to potential applications such as sensors and detectors, solar energy harvesting, transparent and power electronics. Understanding their quantum properties at surfaces and interfaces may play a decisive role for functionalities in high-electron-mobility transistors, quantum electronics or topological quantum computation. These typically require homo- or heteroepitaxial layers of high crystallinity and investigation methods designed to reveal the fascinating physics at (complex) oxide interfaces. This session sets a focus on growth of oxide interfaces, the experimental and theoretical investigation of their novel physical, in particular quantum properties as well as fabrication and characterization of demonstrator devices.
Organized by Martin Albrecht, Oliver Bierwagen, and Saskia F. Fischer
10:00 | DS 11.1 | The contribution has been moved to HL 14.7. | |
10:00 | DS 11.2 | Hauptvortrag: Ferroelectric two-dimensional electron gases for oxide spin-orbitronics — •Julien Bréhin | |
10:30 | DS 11.3 | Electron transport of the two-dimensional electron gas in polar-discontinuity doped LaInO3/BaSnO3 heterostructure — Georg Hoffmann, Fazeel Zohair, Martina Zupancic, Martin Albrecht, and •Oliver Bierwagen | |
10:45 | DS 11.4 | Non-Abelian braiding of phonons in monolayer oxides — •Bo Peng, Adrien Bouhon, Bartomeu Monserrat, and Robert-Jan Slager | |
11:00 | 30 min. break | ||
11:30 | DS 11.5 | Shift of the absoption onset in corundum-like α-(TixGa1−x)2O3 — •Elias Kluth, Michael Fay, Christopher Parmenter, Joseph Roberts, Fabien Massabuau, Rüdiger Goldhahn, and Martin Feneberg | |
11:45 | DS 11.6 | Optical signatures of polarons trapped at ferroelectric domain walls in bismuth ferrite — •Sabine Körbel | |
12:00 | DS 11.7 | Hauptvortrag: Materials and Device Engineering for Gallium Oxide-based Electronics — Nidhin Kurian Kalarickal, Sushovan Dhara, Ashok Dheenan, and •Siddharth Rajan | |
12:30 | DS 11.8 | Hauptvortrag: Strain-driven dissociation of water on (incipient) ferroelectrics — Joshua L. Bates and •Chiara Gattinoni | |