Regensburg 2022 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 11: Focus Session: Quantum Properties at Functional Oxide Interfaces 1 (joint session HL/DS)
DS 11.7: Invited Talk
Tuesday, September 6, 2022, 12:00–12:30, H34
Materials and Device Engineering for Gallium Oxide-based Electronics — Nidhin Kurian Kalarickal1, Sushovan Dhara1, Ashok Dheenan1, and •Siddharth Rajan1,2 — 1ECE Department, The Ohio State University — 2MSE Department, The Ohio State University
This presentation will discuss our recent work on epitaxy, heterostructure design, and electrostatics to achieve high-performance β-Ga2O3 lateral and vertical electronic devices. We will discuss some key results in materials growth and device design for lateral structures, including the first β-(Al,Ga)2O3/β-Ga2O3 modulation-doped structures with excellent transport properties, double-heterostructure modulation-doped structures, and scaled delta-doped transistors with cutoff frequency of 27 GHz, and self-aligned lateral field effect transistors with > 900 mA/mm current density. We will discuss the use of a new damage-free epitaxial etching technique using Ga atomic flux that enables highly precise fabrication of 3-dimensional structures, and applications of this etching to realize field termination in vertical diodes, and lateral FINFETs with enhanced performance. Extreme-permittivity dielectrics provide unique opportunities to create devices that can sustain extreme fields without premature breakdown of metal-semiconductor and dielectric-semiconductor interfaces. We will discuss promising results of electrostatic engineering using BaTiO3/Ga2O3 heterojunctions that enable high fields to be sustained within Gallium Oxide diodes and transistors.