Regensburg 2022 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 13: Thin Film Applications 2

DS 13.5: Vortrag

Mittwoch, 7. September 2022, 10:30–10:45, H14

Growth and electrical properties of sputtered gallium oxide device — •Aman Baunthiyal, Marco Schowalter, Thorsten Mehrtens, Andreas Rosenauer, Seyed Majid Mahdian, Jon-Olaf Krisponeit, and Jens Falta — Institute of Solid State Physics, University of Bremen, Germany

Due to the scalability limitations of conventional semiconductor based devices, there is a high demand for powerful memory devices. Resistive switching (RS) is a promising phenomenon especially for future resistance random access memories. In the last few years, gallium oxide has attracted the interest of researchers toward RS applications due to its very large breakdown voltage and concentration sensitive to oxygen content. In this work, we present devices with RF sputtered gallium oxide on ultra smooth Ru/Al₂O₃ for non-volatile RAMs.

Sputter deposition of gallium oxide on Ru(0001)/Al₂O₃ at 400^∘C results in the good crystallinity with diffraction spots matching the β-Ga₂O₃ structure as confirmed by transmission electron diffraction (TED). For device completion, top electrodes (TE) were fabricated by depositing Al/Ag using the e-beam evaporation. X-ray photoelectron spectroscopy (XPS) confirmed a very large amount of oxygen vacancies in gallium oxide film. A RS behaviour in Al TE devices with an ON/OFF ratio of more than 10⁴ is suggested to be related to formation/rupture of oxygen vacancies filaments. In the case of Ag TE devices, RS is assigned to electro-metallization of Ag electrode. The stable endurance cycle and long retention time of > 10⁴ seconds qualify these devices as a future prototype for non volatile ReRAMs.