Regensburg 2022 – scientific programme
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DS: Fachverband Dünne Schichten
DS 17: 2D Materials 6 (joint session DS/CPP)
DS 17.5: Talk
Wednesday, September 7, 2022, 12:15–12:30, H17
Spin-defect characteristics of single sulfur vacancies in monolayer MoS2 — •Alexander Hötger1, Tomer Amit2, Julian Klein3, Katja Barthelmi1, Thomas Pelini4, Alex Delhomme4, Sergio Rey5, Marek Potemski4,6, Clément Faugeras4, Galit Cohen2, Daniel Hernangómez-Pérez2, Takashi Taniguchi7, Kenji Watanabe7, Christoph Kastl1, Jonathan Finley1, Sivan Refaely-Abramson2, Alexander Holleitner1, and Andreas Stier1 — 1Walter Schottky Institute, Garching, Germany — 2Weizmann Institute of Science, Rehovot, Israel — 3Massachusetts Institute of Technology, Cambridge, USA — 4Laboratoire National des Champs Magnetiques Intenses, Grenoble, France — 5Technical University of Denmark, Lyngby, Denmark — 6University of Warsaw, Warszawa, Poland — 7National Institute for Materials Science, Tsukuba, Japan
Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-spectroscopy from three emission lines of He-ion induced sulfur vacancies in monolayer MoS2. The distinct valley-Zeeman splitting and the brightening of dark states necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of the defect luminescence. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.