Regensburg 2022 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 2: Focus Session: Innovative GaN-based High-power Devices: Growth, Characterization, Simulation, Application 1

DS 2.1: Hauptvortrag

Montag, 5. September 2022, 09:30–10:00, H17

GaN-based power converters enabling talktive power — •Marco Liserre — Kiel University, Kiel, Germany

GaN power semiconductors with their extremely fast switching characteristics enable not only electrical energy conversion which is almost free from switching losses but also to bridge for the first time two fields which have been developing separately for more than 70 years: energy and information transfer. This contribution will start from the physical characteristics of GaN power semiconductors to show what they allow in power conversion and how they can lead to realize power exchange which carries also information.