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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.30: Poster
Mittwoch, 7. September 2022, 16:00–18:00, P3
Atomistic Simulations of Defects Production Under Ion Irradiation in Epitaxial Graphene on SiC — •Mitisha Jain1, Silvan Kretschmer1, Katja Höflich2,3, Joao Marcelo J. Lopes4, and Arkady Krasheninnikov1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany — 2Ferdinand-Braun Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany — 3Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany — 4Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany
In this work, using atomistic simulations at the analytical potential and density-functional theory (DFT) levels, we theoretically study defect production in EG on SiC by ion beams (He and Ne ions). We explicitly consider the effects of the substrate (bulk SiC) on the response of graphene to irradiation. Since the substrate affects the number of displaced carbon atoms and vacancy types in EG, we present information about the number, types and location of defects produced in each layer of EG to guide the experiment in tailoring the defect production. Motivated by the He FIB experiments (aiming at nucleation sites of h-BN growth, operating at 30 keV), our considerations apply to the typical ion energies used in HIM, that is 10-30 keV.