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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.34: Poster

Mittwoch, 7. September 2022, 16:00–18:00, P3

Electronic Reconstruction and Anomalous Hall Effect at the LaAlO₃/SrRuO₃ Interface — •Merit Spring¹, Ji Soo Lim¹, Martin Kamp¹, Louis Veyrat², Pavel Potapov², Axel Lubk², Bernd Büchner², Michael Sing¹, and Ralph Claessen¹ — ¹Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, 97074 Würzburg, Germany — ²Leibniz Institute for Solid State and Materials Research and Würzburg-Dresden Cluster of Excellence ct.qmat, 01069 Dresden, Germany

4d and 5d transition metal oxides are a promising class of materials for topological phases in the context of electron correlations. Recently, the ferromagnetic metal SrRuO₃ (SRO) grown on a SrTiO₃ (STO) (001) substrate has been reported to exhibit electronic-reconstruction induced interfacial charge pinning accompanied by a topological transition of its electronic bands when capped with a LaAlO₃ (LAO) layer [1]. LAO is a polar oxide and the electronic reconstruction in a heterosystem of LAO/STO caused by the polar discontinuity at the interface is well known. For the LAO/SRO system a similar behaviour is expected and charge is thought to be accumulated at the very interface giving rise to strong inversion-symmetry breaking and hence change in the momentum-space topology [1]. Here we show the observation of signatures of an anomalous Hall effect in 4uc SRO films capped with LAO but also with non-polar STO. We correlate these findings with angle-dependent XPS data that allow for depth-profiling the oxidation state of ruthenium in both systems.

[1] Thiel, T. C. et al., Phys. Rev. Lett. 127, 127202 (2021)