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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.38: Poster

Mittwoch, 7. September 2022, 16:00–18:00, P3

Metal-insulator transition in AgSb_1−xSn_xTe₂ alloys — •Christian Teichrib and Matthias Wuttig — I. Physikalisches Institut (IA)

Metal-insulator transitions describe the localisation of charge carriers upon the change of a physical parameter. They can occur as a result of electron correlations (Mott transition) or disorder (Anderson transition) but a distinction between these two mechanisms is generally difficult and often both effects play a role in the transition. Phase change materials show a multitude of remarkable properties that make them suitable for the investigation of localisation phenomena. Their density of states at the Fermi level can be varied through chemical composition and disorder can be tuned through thermal annealing. This allows for the electrical resistivity to be modified over several orders of magnitude and a transition from a metallic to an insulating state to occur.
We present electrical transport and structural data for AgSb_1−xSn_xTe₂ alloys where a metal-insulator transition is observed upon variation of the stoichiometry. The nature of the transition is investigated using the temperature dependence of the resistivity, magnetoresistance data, and the Hall effect.