Regensburg 2022 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.6: Poster

Wednesday, September 7, 2022, 16:00–18:00, P3

Pseudo-2-dimensional Ga₂O₃ structures grown on Al₂O₃ using metal-oxide catalyzed epitaxy (MOCATAXY) — •Justin Andreas Bich¹, Marco Schowalter¹, Tjark Liestmann¹, Sushma Raghuvansy¹, Jonathan McCandless², Manuel Alonso-Orts¹, Andreas Rosenauer¹, Martin Eickhoff¹, and Patrick Vogt¹ — ¹Institute of Solid-State Physics, Bremen University, Otto-Hahn-Allee 1, 28359 Bremen, Germany — ²School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

Ga₂O₃ has attracted attention as a new wide-bandgap semiconductor—which can be alloyed with Al₂O₃—for high-power applications. However, the growth of group-III sesquioxides by molecular-beam epitaxy differs substantially from other material systems, e.g., III-V materials.

In this work, we present the growth of ultra-thin α-Ga₂O₃ (0001) on α-Al₂O₃ (0001) in a controlled self-passivating manner. Using MOCATAXY, we observe the formation of this ’pseudo’ 2-dimensional (2D) α-Ga₂O₃ thin film and its growth passivation after reaching 2 nm thickness. This α-Ga₂O₃ 2D thin film serves as a template for growing α-Ga₂O₃/α-Al₂O₃ quantum wells.

We present reflection-high energy electron diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, x-ray diffraction, x-ray reflectivity, and transmission electron microscopy data, showing the existence and characteristics of this ’pseudo’ 2D α-Ga₂O₃ thin film grown by MOCATAXY, and explain our results using a kinetic and thermodynamic framework.