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Regensburg 2022 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 21: Layer Deposition (ALD, MBE, Sputtering, ...)

DS 21.2: Vortrag

Donnerstag, 8. September 2022, 09:45–10:00, H14

Molecular-beam epitaxy of Cd- and Nb-containing BixSey-based compounds for novel topological materials — •Christoph Ringkamp1, Abdur Rehman Jalil2, Erik Zimmermann1, Peter Schüffelgen1, Thomas Schäpers1, Gregor Mussler1, and Detlev Grützmacher11PGI-9, Forschungszentrum Jülich — 2PGI-10, Forschungszentrum Jülich

Topological insulators (TIs) have gained a lot of interest in recent years because of their unique topologically protected surface states. Prominent examples of 3-dimensional topological insulators are Bi2Te3, Sb2Te3, and Bi2Se3 and alloys thereof. The combination of TI with superconductors and using the proximity effect to induce superconductivity in the TI is of fundamental interest in physics and may direct a possible avenue towards novel applications in the field of quantum computation. Here the successful deposition of Cd- and Nb-containing BixSey films by molecular beam epitaxy is reported. Carefully adjusting the growth parameter, single-crystal CdBi2Se4 and (BiSe)1.10NbSe2 thin films have been grown on sapphire substrates. For both materials, transmission electron microscopy images reveal the expected stacking sequences of atomic layers within the deposited films, indicating the presence of the anticipated stoichiometry. First data of the electrical transport of (BiSe)1.10NbSe2, films show superconducting behavior with a transition temperature of 0.4 K.

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