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DS: Fachverband Dünne Schichten

DS 21: Layer Deposition (ALD, MBE, Sputtering, ...)

DS 21.2: Vortrag

Donnerstag, 8. September 2022, 09:45–10:00, H14

Molecular-beam epitaxy of Cd- and Nb-containing Bi_xSe_y-based compounds for novel topological materials — •Christoph Ringkamp¹, Abdur Rehman Jalil², Erik Zimmermann¹, Peter Schüffelgen¹, Thomas Schäpers¹, Gregor Mussler¹, and Detlev Grützmacher¹ — ¹PGI-9, Forschungszentrum Jülich — ²PGI-10, Forschungszentrum Jülich

Topological insulators (TIs) have gained a lot of interest in recent years because of their unique topologically protected surface states. Prominent examples of 3-dimensional topological insulators are Bi₂Te₃, Sb₂Te₃, and Bi₂Se₃ and alloys thereof. The combination of TI with superconductors and using the proximity effect to induce superconductivity in the TI is of fundamental interest in physics and may direct a possible avenue towards novel applications in the field of quantum computation. Here the successful deposition of Cd- and Nb-containing Bi_xSe_y films by molecular beam epitaxy is reported. Carefully adjusting the growth parameter, single-crystal CdBi₂Se₄ and (BiSe)_1.10NbSe₂ thin films have been grown on sapphire substrates. For both materials, transmission electron microscopy images reveal the expected stacking sequences of atomic layers within the deposited films, indicating the presence of the anticipated stoichiometry. First data of the electrical transport of (BiSe)_1.10NbSe₂, films show superconducting behavior with a transition temperature of 0.4 K.