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DS: Fachverband Dünne Schichten

DS 22: 2D Materials 8 (joint session DS/CPP)

DS 22.6: Vortrag

Donnerstag, 8. September 2022, 10:45–11:00, H17

Antisymmetric magnetoresistance in a Fe₃GeTe₂-Fe₃GeTe₂ van der Waals ferromagnetic homojunction — •Jan Bärenfänger¹, Kenji Watanabe², Takashi Taniguchi², Jonathan Eroms¹, Dieter Weiss¹, and Mariusz Ciorga¹ — ¹Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — ²NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

The emergence of novel two-dimensional (2D) magnetic van der Waals (vdW) materials have breathed new life into the field of spintronics. The weak vdW interaction between layers of strong covalent bonds enables the exfoliation of these materials down to monolayers. Furthermore, vdW heterostructures can easily be fabricated by stacking them on top of each other like LEGO blocks, bringing a platform for novel spintronic devices. Here, we report an antisymmetric magnetoresistance (MR) in an Fe3GeTe2- Fe3GeTe2 (FGT) vdW homojunction. We attribute it to eddy currents emerging at the interface of the antiparallel, perpendicular-to-plane magnetized FGT flakes, due to the different sign of the anomalous Hall effect in both flakes. These eddy currents perturb the measured longitudinal resistance, resulting in the observed antisymmetry. Such an interpretation is supported by the observation of a sign change of the MR when measuring the voltage drop along the opposite edges of the transport channel . This work highlights the potential for new spintronic applications using vdW ferromagnets.