Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 23: Optical Analysis of Thin Films (Reflection, Ellipsometry, Raman, IR-DUV Spectroscopy, ...)
DS 23.2: Vortrag
Donnerstag, 8. September 2022, 11:00–11:15, H14
dielectric function of Al(1-x)ScxN obtained by spectroscopic ellipsometry. — •Younes Slimi1, Rebecca Petrich1, Rüdiger Schmidt-Grund1, Hauke-Lars Honig2, Christina Helm3, Heike Bartsch3, Jens Müller3, Peter Schaaf2, and Stefan Krischok1 — 1Fachgebiet Technische Physik I, IMN Macro Nano, Technische Universität Ilmenau, 98693 Ilmenau — 2Fachgebiet Werkstoffe der Elektrotechnik, Institut für Werkstofftechnik und Institut für Mikro-und Nanotechnologien MacroNano, Technische Universität Ilmenau, 98693 Ilmenau — 3Fachgebiet Elektroniktechnologie, Technische Universität Ilmenau, IMN Macro Nano, 98693 Ilmenau
Scandium Aluminum Nitride alloy (ScxAl1-xN) thin films were prepared via the sputtering technique. The samples then were measured by spectroscopic ellipsometry (SE) and analysed to determine the sample's dielectric function (DE) by means of numeric b-spline and line shape model dielectric functions. We found a redshift of the bandgap (Eg) and an increasing refractive index with increasing Sc content. As AlN is hexagonal and ScN cubic, the birefringence also reduces when Sc is incorporated into the alloy. Therefore, the samples were measured with XRD and EDX to determine the crystal structure and lattice constant as a function of Sc percentage.