Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 24: 2D Materials 9 (joint session HL/CPP/DS)

DS 24.4: Vortrag

Donnerstag, 8. September 2022, 12:00–12:15, H36

Large perpendicular field in bilayer TMD via hybrid molecular gating — •Sviatoslav Kovalchuk¹, Abhijeet Kumar¹, Simon Pessel¹, Kyrylo Greben¹, Dominik Christiansen², Malte Selig², Andreas Knorr², and Kirill Bolotin¹ — ¹Department of Physics, Quantum Nanoelectronics of 2D Materials, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany — ²Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

We consider structures in which bilayer TMDs are sandwiched between a layer of molecules and Si gate. We show that these structure allow increasing, by a factor of 2, maximum electric field achievable in this 2D material. This in turn, allows reaching electric field >0.2 V/nm. In MOS2 this is sufficient to bring interlayer excitons IX into resonance with either A or B intralayer excitons. We study coupling between these excitons, and give an outlook on the new technique to achieve large perpendicular electric fields detectable in optical measurements.