DS 26: Thin Oxides and Oxide Layers 2
Donnerstag, 8. September 2022, 16:15–17:15, H14
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16:15 |
DS 26.1 |
Studying the differences of Ga2O3 grown by conventional molecular-beam epitaxy (MBE) and suboxide MBE (S-MBE) — •Sushma Raghuvansy, Justin A. Bich, Tjark Liestmann, Jonathan McCandless, Manuel Alonso-Orts, Darrell G. Schlom, Martin Eickhoff, and Patrick Vogt
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16:30 |
DS 26.2 |
Comparative Study of a Ga2O3 nucleation layer and its impact on Ga2O3 growth on Al2O3 by molecular beam epitaxy — •Alexander Karg, Adrian Messow, Manuel Alonso-Orts, Stephan Figge, Patrick Vogt, and Martin Eickhoff
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16:45 |
DS 26.3 |
The effect of post-growth annealing of titanium dioxide thin films prepared by a sol-gel process on the photocatalytic activity — •Lu He, Shuo Niu, Dietrich.R.T. Zahn, and Teresa I. Madeira
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17:00 |
DS 26.4 |
Oxidation behavior of SMART alloys and MAX phases materials and applicability in solar receivers. — •Leonardo Guimarães Leal Lealdini, Andrey Litnovsky, and Jesus Gonzalez-Julian
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