Regensburg 2022 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: Thin Oxides and Oxide Layers 2

DS 26.2: Talk

Thursday, September 8, 2022, 16:30–16:45, H14

Comparative Study of a Ga2O3 nucleation layer and its impact on Ga2O3 growth on Al2O3 by molecular beam epitaxy — •Alexander Karg, Adrian Messow, Manuel Alonso-Orts, Stephan Figge, Patrick Vogt, and Martin Eickhoff — Institute of Solid-State Physics, University Bremen, Bremen, Germany

Ga2O3 is a wide bandgap semiconductor and is seen as a promising candidate for e.g. future high-power electronics, and UV-detectors. The availability of single crystalline substrates makes the material attractive for device fabrication. Because of easier access, the majority of experiments were carried out by heteroepitaxy on e.g. Al2O3 substrates. In this study, the influence of the Al2O3 substrate on the nucleation and layer growth is investigated and compared with the use of a beta-Ga2O3 buffer layer to mimic homoepitaxial conditions. It was found that the effective Me to O ratio on the surface differs substantially and the amount of the available species (especially active oxygen) for growth could be estimated with respect to the different growth surfaces (0001) Al2O3 and (-201) beta-Ga2O3. This study was transferred to In2O3 growth to determine the different oxidation efficacies of the cations Indium and Gallium. Furthermore, the influence of the plasma power on the nucleation behavior of Ga2O3 and In2O3 as well as its influence on the growth kinetics itself and the layer properties will be discussed.