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09:30 |
DS 27.1 |
THz conductivity of nanograined Bi2Te3 pellets with varying Te doping — •Ahana Bhattacharya, JeongWoo Han, Sepideh Izadi, Sarah Salloum, Stephan Schulz, Gabi Schierning, and Martin Mittendorff
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09:45 |
DS 27.2 |
Direct growth of monolayer MoS2 on nanostructured silicon waveguides — •A Kuppadakkath, E Najafidehaghani, Z Gan, A Tuniz, G Ngo, H Knopf, F Löchner, F Abtahi, T Bucher, S Shradha, T Käsebier, S Palomba, N Felde, P Paul, T Ullsperger, S Schröder, A Szeghalmi, T Pertsch, I Staude, U Zeitner, A George, A Turchanin, and F Eilenberger
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10:00 |
DS 27.3 |
Atomic layer deposition of ternary MoWS2 — •Christian Tessarek, Tim Grieb, Andreas Rosenauer, and Martin Eickhoff
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10:15 |
DS 27.4 |
Epitaxial growth of post transition metal chalcogenides: From standard approaches to new capabilities — •Eugenio Zallo, Michele Bissolo, Marco Dembecki, Gregor Koblmüller, and Jonathan J. Finley
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10:30 |
DS 27.5 |
Fabrication of Dielectric Mirrors and Microcavity Configurations for Light-Matter Coupling with Transition-Metal Dichalcogenides Heterostructures — •Chirag Palekar, Manan Shah, Fynn Kunze, Peter Klar, Stephan Reitzenstein, and Arash Rahimi-Iman
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10:45 |
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15 min. break
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11:00 |
DS 27.6 |
Selective area growth of MoS2 via CVD on patterned GaN-AlOx substrates — •Simon Wörle, Theresa Grünleitner, Alex Henning, and Ian Sharp
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11:15 |
DS 27.7 |
Patterned growth of transition metal dichalcogenides monolayers and multilayers for electronic and optoelectronic device application — •Seung Heon Han, Ziyang Gan, Emad Najafidehaghani, Fatemeh Abtahi, Christof Neumann, Julian Picker, Tobias Vogel, Uwe Hübner, Falk Eilenberger, Antony George, and Andrey Turchanin
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11:30 |
DS 27.8 |
Conductive 2D MOFs in van-der-Waals heterostructures — •Jonas Pöhls, Zhiyong Wang, Renhao Dong, and Thomas Weitz
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11:45 |
DS 27.9 |
Controlled Encapsulation of Monolayer MoS2 with Ultrathin Aluminium Oxide for Tunnel Contacts — •Sergej Levashov, Chenjiang Qian, Theresa Grünleitner, Jon J. Finley, Alex Henning, and Ian D. Sharp
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