Regensburg 2022 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 27: 2D Materials 10 (joint session HL/CPP/DS)
DS 27.4: Vortrag
Freitag, 9. September 2022, 10:15–10:30, H36
Epitaxial growth of post transition metal chalcogenides: From standard approaches to new capabilities — •Eugenio Zallo1,2, Michele Bissolo1, Marco Dembecki1, Gregor Koblmüller1, and Jonathan J. Finley1 — 1Walter-Schottky-Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748, Garching, Germany — 2Paul-Drude-Institut für Festkoerperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117, Berlin, Germany
Van der Waals (vdW) materials grown epitaxially are an urgent challenge for the development of scalable and high-crystalline-quality semiconductor films that can be exploited for novel device technologies. 2D materials "beyond graphene" have sparked immense interest in recent years, due to their excellent physical properties. Among them, post transition metal chalcogenides (PTMC, M={In,Ga} and C={S,Se,Te}) are vdW semiconductor materials with extraordinary photoresponsivity, a quasi-direct gap with a Mexican hat valence band and promising thermoelectric properties but they suffer from fast layer oxidation. In this presentation, the molecular beam epitaxy (MBE) growth of large-area PTMC is demonstrated on 3D and 2D bonded substrates by means of encapsulation strategies and careful microscopic and spectroscopic characterizations supported by density functional theory calculations. In order to study the pristine information of air sensitive materials, we present a cutting edge UHV cluster tool for the synthesis of ultrapure 2D-PTMCs and their heterostructures. The potential directions will be described.