Regensburg 2022 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 6: Focus Session: Innovative GaN-based High-power Devices: Growth, Characterization, Simulation, Application 2

DS 6.1: Hauptvortrag

Montag, 5. September 2022, 15:00–15:30, H17

Novel high power device structures: Enabling compact and integrated power ICs — •Elison Matioli — EPFL, Lausanne, Switzerland

This talk will discuss new technologies to drastically reduce the sheet resistance in these semiconductors. Combined with a judicious design of the electric field distribution, based on nanostructures, this approach enables to concurrently reduce the on-resistance and increase the breakdown voltage of power devices, leading to figures of merit far beyond the state-of-the-art. To manage the large heat fluxes in power devices, I will present new technologies based on integrated microfluidic cooling inside the device. By co-designing microfluidics and electronics within the same semiconductor substrate, a monolithically integrated manifold microchannel cooling structure was produced with efficiency beyond what is currently available. Our results show that heat fluxes exceeding 1.7 kW/cm2 could be extracted using only 0.57 W/cm2 of pumping power. The proposed cooling technology should enable further miniaturization of electronics, and greatly reduce the energy consumption in cooling of electronics. Furthermore, by removing the need for large external heat sinks, this approach enables the realization of very compact power converters integrated on a single chip.